| 产品信息 | 制造商 | 价格 | 操作 | 安装风格 | 资格 | 封装 | 最小工作温度 | 最大工作温度 | 封装 / 箱体 | 通道数量 | 技术 | 商标名 | 配置 | Pd-功率耗散 | Vgs - 栅极-源极电压 | 晶体管极性 | Vds-漏源极击穿电压 | Id-连续漏极电流 | Rds On-漏源导通电阻 | Vgs th-栅源极阈值电压 | Qg-栅极电荷 | 通道模式 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MOSFET PTD HIGH VOLTAGE
|
STMicroelectronics |
|
库存：52,307
|
- | AEC-Q101 | Cut Tape, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：58,696
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | HSOF-8 | 1 Channel | SI | - | Single | 167 W | 12 V | N-Channel | 600 V | 8 A | 65 mOhms | 3.5 V | 51 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：54,471
|
- | - | Cut Tape, MouseReel, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET AUTOMOTIVE
|
Infineon Technologies |
|
库存：53,363
|
- | - | Cut Tape, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：50,438
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263-3 | 1 Channel | SI | - | Single | 156 W | 20 V | N-Channel | 600 V | 31 A | 70 mOhms | 4.5 V | 67 nC | Enhancement |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：52,981
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263-3 | 1 Channel | SI | - | Single | 178 W | 20 V | N-Channel | 600 V | 38 A | 55 mOhms | 4.5 V | 79 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：56,705
|
- | - | Cut Tape, MouseReel, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：58,484
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | HSOF-8 | 1 Channel | SI | - | Single | 390 W | 20 V | N-Channel | 600 V | 23 A | 22 mOhms | 4.5 V | 150 nC | Enhancement |
|
MOSFET DISC MOSFET N-CH LINEAR L2
|
IXYS |
|
库存：57,065
|
Through Hole | - | Tube | - 55 C | + 150 C | PLUS247-3 | - | - | LinearL2 | Single | 960 W | 20 V | N-Channel | 75 V | 240 A | 7 mOhms | 2 V | - | - |
|
MOSFET 60V SGL N-CH TRENCHMOS
|
Nexperia |
|
库存：56,114
|
SMD/SMT | - | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | SOT-23-3 | 1 Channel | SI | - | Single | 325 mW | 20 V | N-Channel | 60 V | 300 mA | 4.5 Ohms | 1.1 V | 0.33 nC | Enhancement |
|
MOSFET IXTA10P50P TRL
|
IXYS |
|
库存：54,926
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263AA-3 | 1 Channel | SI | PolarP | Single | 300 W | 20 V | P-Channel | 500 V | 10 A | 1 Ohms | - 2 V | 50 nC | Enhancement |
|
MOSFET SIC MOS D2PAK-7L 20MOHM 1
|
ON Semiconductor |
|
库存：54,675
|
SMD/SMT | AEC-Q101 | Cut Tape, MouseReel, Reel | - 55 C | + 175 C | D2PAK-7 | 1 Channel | SiC | - | Single | 468 W | - 15 V, 25 V | N-Channel | 1200 V | 98 A | 28 mOhms | 4.3 V | 220 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：54,737
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 227 W | - 7 V, 23 V | N-Channel | 1200 V | 56 A | 40 mOhms | 5.7 V | 63 nC | Enhancement |
|
MOSFET P-CHANNEL 30-V (D-S) MOSFET
|
Vishay Semiconductors |
|
库存：56,056
|
SMD/SMT | - | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | PowerPAK-1212-8 | 1 Channel | SI | TrenchFET | Single | 65.7 W | - 20 V, 16 V | P-Channel | 30 V | 108 A | 5.8 mOhms | - 2.2 V | 76 nC | Enhancement |
|
MOSFET PTD HIGH VOLTAGE
|
STMicroelectronics |
|
库存：58,193
|
SMD/SMT | AEC-Q101 | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | H2PAK-2 | 1 Channel | SI | - | Single | 250 W | 30 V | N-Channel | 1200 V | 12 A | 0.69 Ohms | 3 V | 44.2 nC | Enhancement |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：51,638
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-220-3 | 1 Channel | SI | - | Single | 390 W | 20 V | N-Channel | 600 V | 23 A | 22 mOhms | 4.5 V | 150 nC | Enhancement |
|
MOSFET N-Channel 100 V (D-S) MOSFET
|
Vishay Semiconductors |
|
库存：56,044
|
SMD/SMT | - | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | SO-8 | 1 Channel | SI | TrenchFET | - | - | 20 V | N-Channel | 100 V | 95 A | 4 mOhms | - 5.5 V | 93 nC | Enhancement |
|
MOSFET DISC MOSFET N-CH STD-POLAR3
|
IXYS |
|
库存：59,426
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | - | - | Polar3 | Single | 960 W | 20 V | N-Channel | 3000 V | 4 A | 12.5 Ohms | 3 V | - | - |
|
MOSFET IXTA3N120 TRL
|
IXYS |
|
库存：53,956
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263-3 | 1 Channel | SI | - | Single | 200 W | 20 V | N-Channel | 1200 V | 3 A | 4.5 Ohms | 2.5 V | 42 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：55,002
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 115 W | - 7 V, 23 V | N-Channel | 1200 V | 26 A | 117 mOhms | 5.7 V | 21 nC | Enhancement |
|
MOSFET 20MW 1200V
|
ON Semiconductor |
|
库存：56,800
|
Through Hole | AEC-Q101 | Tube | - 55 C | + 175 C | TO-247-3 | 1 Channel | SiC | - | Single | 535 W | - 15 V, 25 V | N-Channel | 1200 V | 103 A | 28 mOhms | 4.3 V | 203 nC | Enhancement |
|
MOSFET 20MOHM 900V
|
ON Semiconductor |
|
库存：54,701
|
Through Hole | - | Tube | - 55 C | + 175 C | TO-247-3 | 1 Channel | SiC | - | Single | 503 W | - 10 V, 19 V | N-Channel | 900 V | 118 A | 28 mOhms | 4.3 V | 196 nC | Enhancement |
|
MOSFET SILICON CARBIDE MOSFET
|
Infineon Technologies |
|
库存：52,650
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 189 W | 18 V | N-Channel | 650 V | 47 A | 0.034 Ohms | 5.7 V | 62 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：53,564
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 150 W | - 7 V, 23 V | N-Channel | 1200 V | 36 A | 78 mOhms | 5.7 V | 31 nC | Enhancement |
|
MOSFET FRFET 650 V 65 A 95 mOhm TO-220
|
ON Semiconductor |
|
库存：54,851
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-220-3 | 1 Channel | SI | SuperFET III | Single | 272 W | 30 V | N-Channel | 650 V | 36 A | 95 mOhms | 5 V | 66 nC | Enhancement |
| 产品信息 | 制造商 | 价格 | 操作 | 安装风格 | 资格 | 封装 | 最小工作温度 | 最大工作温度 | 封装 / 箱体 | 通道数量 | 技术 | 商标名 | 配置 | Pd-功率耗散 | Vgs - 栅极-源极电压 | 晶体管极性 | Vds-漏源极击穿电压 | Id-连续漏极电流 | Rds On-漏源导通电阻 | Vgs th-栅源极阈值电压 | Qg-栅极电荷 | 通道模式 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MOSFET PTD HIGH VOLTAGE
|
STMicroelectronics |
|
库存：52,307
|
- | AEC-Q101 | Cut Tape, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：58,696
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | HSOF-8 | 1 Channel | SI | - | Single | 167 W | 12 V | N-Channel | 600 V | 8 A | 65 mOhms | 3.5 V | 51 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：54,471
|
- | - | Cut Tape, MouseReel, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET AUTOMOTIVE
|
Infineon Technologies |
|
库存：53,363
|
- | - | Cut Tape, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：50,438
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263-3 | 1 Channel | SI | - | Single | 156 W | 20 V | N-Channel | 600 V | 31 A | 70 mOhms | 4.5 V | 67 nC | Enhancement |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：52,981
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263-3 | 1 Channel | SI | - | Single | 178 W | 20 V | N-Channel | 600 V | 38 A | 55 mOhms | 4.5 V | 79 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：56,705
|
- | - | Cut Tape, MouseReel, Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：58,484
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | HSOF-8 | 1 Channel | SI | - | Single | 390 W | 20 V | N-Channel | 600 V | 23 A | 22 mOhms | 4.5 V | 150 nC | Enhancement |
|
MOSFET DISC MOSFET N-CH LINEAR L2
|
IXYS |
|
库存：57,065
|
Through Hole | - | Tube | - 55 C | + 150 C | PLUS247-3 | - | - | LinearL2 | Single | 960 W | 20 V | N-Channel | 75 V | 240 A | 7 mOhms | 2 V | - | - |
|
MOSFET 60V SGL N-CH TRENCHMOS
|
Nexperia |
|
库存：56,114
|
SMD/SMT | - | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | SOT-23-3 | 1 Channel | SI | - | Single | 325 mW | 20 V | N-Channel | 60 V | 300 mA | 4.5 Ohms | 1.1 V | 0.33 nC | Enhancement |
|
MOSFET IXTA10P50P TRL
|
IXYS |
|
库存：54,926
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263AA-3 | 1 Channel | SI | PolarP | Single | 300 W | 20 V | P-Channel | 500 V | 10 A | 1 Ohms | - 2 V | 50 nC | Enhancement |
|
MOSFET SIC MOS D2PAK-7L 20MOHM 1
|
ON Semiconductor |
|
库存：54,675
|
SMD/SMT | AEC-Q101 | Cut Tape, MouseReel, Reel | - 55 C | + 175 C | D2PAK-7 | 1 Channel | SiC | - | Single | 468 W | - 15 V, 25 V | N-Channel | 1200 V | 98 A | 28 mOhms | 4.3 V | 220 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：54,737
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 227 W | - 7 V, 23 V | N-Channel | 1200 V | 56 A | 40 mOhms | 5.7 V | 63 nC | Enhancement |
|
MOSFET P-CHANNEL 30-V (D-S) MOSFET
|
Vishay Semiconductors |
|
库存：56,056
|
SMD/SMT | - | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | PowerPAK-1212-8 | 1 Channel | SI | TrenchFET | Single | 65.7 W | - 20 V, 16 V | P-Channel | 30 V | 108 A | 5.8 mOhms | - 2.2 V | 76 nC | Enhancement |
|
MOSFET PTD HIGH VOLTAGE
|
STMicroelectronics |
|
库存：58,193
|
SMD/SMT | AEC-Q101 | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | H2PAK-2 | 1 Channel | SI | - | Single | 250 W | 30 V | N-Channel | 1200 V | 12 A | 0.69 Ohms | 3 V | 44.2 nC | Enhancement |
|
MOSFET HIGH POWER_NEW
|
Infineon Technologies |
|
库存：51,638
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-220-3 | 1 Channel | SI | - | Single | 390 W | 20 V | N-Channel | 600 V | 23 A | 22 mOhms | 4.5 V | 150 nC | Enhancement |
|
MOSFET N-Channel 100 V (D-S) MOSFET
|
Vishay Semiconductors |
|
库存：56,044
|
SMD/SMT | - | Cut Tape, MouseReel, Reel | - 55 C | + 150 C | SO-8 | 1 Channel | SI | TrenchFET | - | - | 20 V | N-Channel | 100 V | 95 A | 4 mOhms | - 5.5 V | 93 nC | Enhancement |
|
MOSFET DISC MOSFET N-CH STD-POLAR3
|
IXYS |
|
库存：59,426
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | - | - | Polar3 | Single | 960 W | 20 V | N-Channel | 3000 V | 4 A | 12.5 Ohms | 3 V | - | - |
|
MOSFET IXTA3N120 TRL
|
IXYS |
|
库存：53,956
|
SMD/SMT | - | Cut Tape, Reel | - 55 C | + 150 C | TO-263-3 | 1 Channel | SI | - | Single | 200 W | 20 V | N-Channel | 1200 V | 3 A | 4.5 Ohms | 2.5 V | 42 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：55,002
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 115 W | - 7 V, 23 V | N-Channel | 1200 V | 26 A | 117 mOhms | 5.7 V | 21 nC | Enhancement |
|
MOSFET 20MW 1200V
|
ON Semiconductor |
|
库存：56,800
|
Through Hole | AEC-Q101 | Tube | - 55 C | + 175 C | TO-247-3 | 1 Channel | SiC | - | Single | 535 W | - 15 V, 25 V | N-Channel | 1200 V | 103 A | 28 mOhms | 4.3 V | 203 nC | Enhancement |
|
MOSFET 20MOHM 900V
|
ON Semiconductor |
|
库存：54,701
|
Through Hole | - | Tube | - 55 C | + 175 C | TO-247-3 | 1 Channel | SiC | - | Single | 503 W | - 10 V, 19 V | N-Channel | 900 V | 118 A | 28 mOhms | 4.3 V | 196 nC | Enhancement |
|
MOSFET SILICON CARBIDE MOSFET
|
Infineon Technologies |
|
库存：52,650
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 189 W | 18 V | N-Channel | 650 V | 47 A | 0.034 Ohms | 5.7 V | 62 nC | Enhancement |
|
MOSFET SIC DISCRETE
|
Infineon Technologies |
|
库存：53,564
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-247-3 | 1 Channel | SiC | CoolSiC | Single | 150 W | - 7 V, 23 V | N-Channel | 1200 V | 36 A | 78 mOhms | 5.7 V | 31 nC | Enhancement |
|
MOSFET FRFET 650 V 65 A 95 mOhm TO-220
|
ON Semiconductor |
|
库存：54,851
|
Through Hole | - | Tube | - 55 C | + 150 C | TO-220-3 | 1 Channel | SI | SuperFET III | Single | 272 W | 30 V | N-Channel | 650 V | 36 A | 95 mOhms | 5 V | 66 nC | Enhancement |
